TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 0.028Ω |
Rated Power Dissipation: | 1.25|W |
Qg Gate Charge: | 10.5nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
500
6.181
3090.5
1500
5.1778
7766.7
2500
5.1019
12754.75
5000
5.0359
25179.5
10000
4.96
49600