ZXMN3B14FTA Mosfets_Inventory of electronic components_Electronic equipment_Power management

ZXMN3B14FTA


：	ZXMN3B14FTA
：	Mosfets
：	Diodes Incorporated
：	N-Channel 30 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	30V
Drain-Source On Resistance-Max:	0.08Ω
Rated Power Dissipation:	1.5\|W
Qg Gate Charge:	6.7nC
Package Style:	SOT-23 (SC-59,TO-236)
Mounting Method:	Surface Mount

3000

5.2245

15673.5

6000

5.017

30102

9000

4.7237

42513.3

12000

4.5163

54195.6

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LTC4372IMS8-PBF

LOW ICC IDEAL DIODE CONTROLLER W

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MP2017 Series 175 V 0.5 A Reed-Based Magnetic Sensor Encapsulated

Infineon

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Dual N-Channel 25 V 3.2 mOhm 15 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

Diodes Incorporated

ZXMN3B14FTA

N-Channel 30 V 0.08 Ohm Surface Mount Enhancement Mode MOSFET - SOT-23

Microchip

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TC620 Series 18 V Dual Trip Point Temperature Sensor - SOIC-8

Stewart Connector / Bel

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Zilog

Z86E0812SSG1866

IC MCU 8BIT 2KB OTP 18SOIC

Zilog

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IC MCU 8BIT 2KB OTP 18DIP

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Zilog

Z53C8003FSC00TR

IC SCSI CMOS 48LQFP

Micron

MT40A512M16LY-062E AIT:E

DRAM DDR4 8G 512MX16 FBGA

Crydom

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Discrete Semiconductor Modules Power Module, SCR/Diode, F18 Series

Nichicon

UCD1E101MCL1GS

CD Series 25 V 100 µF Can Aluminum Electrolytic Capacitor

Vishay

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RH Series 49.99 x 21.44 mm 50 W 6 Ohm ±1 % ±50 ppm/°C Wirewound Resistor

Vishay

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TDK Corporation

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FIXED IND 110NH 80MA 5 OHM SMD

EPCOS / TDK

B88069X4313S102

Gas Discharge Tubes - GDTs / Gas Plasma Arrestors 600VDC 1pF 0.2

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