TYPE | DESCRIPTION |
Fet Type: | Dual N-Ch |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 0.02Ω |
Rated Power Dissipation: | 1.25|W |
Qg Gate Charge: | 36.8nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
500
14.8993
7449.65
1000
12.4616
12461.6
1500
12.3201
18480.15
2500
12.1784
30446
5000
11.961
59805