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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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ZXMN10B08E6TA
ZXMN10B08E6TA
:
ZXMN10B08E6TA
:
Mosfets
:
Diodes Incorporated
:
ZXMN10B Series
:
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:
Reel
:
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TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
0.23Ω
Rated Power Dissipation:
1.1|W
Package Style:
SOT-23-6 (SOT-26)
Mounting Method:
Surface Mount
3000
3.1558
9467.4
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