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| TYPE | DESCRIPTION |
| Fet Type: | Dual N/P-Ch |
| No of Channels: | 4 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 125mΩ/210mΩ |
| Rated Power Dissipation: | 0.87W |
| Qg Gate Charge: | 3.9nC/5.2nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 2.72A/2.06A |
| Turn-on Delay Time: | 1.7ns/1.2ns |
| Turn-off Delay Time: | 6.6ns/12.1ns |
| Rise Time: | 2.3ns/2.3ns |
| Fall Time: | 2.9ns/7.5ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Input Capacitance: | 190pF/204pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
8.5571
21392.75
5000
6.9764
34882
7500
6.9005
51753.75
10000
6.8244
68244
