TYPE | DESCRIPTION |
Fet Type: | Dual N/P-Ch |
Drain-to-Source Voltage [Vdss]: | 100V/-100V |
Drain-Source On Resistance-Max: | 0.7Ω/1Ω |
Rated Power Dissipation: | 1.36|W |
Qg Gate Charge: | 2.9nC/3.5nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
9.6362
24090.5
5000
7.7617
38808.5
7500
7.6957
57717.75