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晶体管
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金属氧化物半导体场效应晶体管
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SUD50P10-43L-GE3
SUD50P10-43L-GE3
:
SUD50P10-43L-GE3
:
Mosfets
:
Vishay
:
SUD50P10 Series
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
P-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
43mΩ
Rated Power Dissipation:
6.9|W
Qg Gate Charge:
106nC
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount
PDF(1)
2000
20.985
41970
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