TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 0.078Ω |
Rated Power Dissipation: | 210W |
Qg Gate Charge: | 82nC |
Gate-Source Voltage-Max [Vgss]: | 25V |
Drain Current: | 22A |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 5V |
Technology: | Si |
Height - Max: | 9.52mm |
Length: | 10.4mm |
Input Capacitance: | 3470pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
1
163.0358
163.0358
10
148.5156
1485.156
30
142.0408
4261.224
100
135.2823
13528.23
250
130.3983
32599.575