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STP38N65M5

  • STP38N65M5
  • STP38N65M5
STP38N65M5
Mosfets
STMicroelectronics
N-Channel 650 V
-
Box
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:650V
Drain-Source On Resistance-Max:95mΩ
Rated Power Dissipation:190|W
Qg Gate Charge:71nC
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

55.8751

2793.755

150

47.7022

7155.33

250

46.9841

11746.025

750

45.4161

34062.075

1250

44.698

55872.5

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