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STP13NM60ND

  • STP13NM60ND
  • STP13NM60ND
STP13NM60ND
Mosfets
STMicroelectronics
N-Channel 600 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:0.38Ω
Rated Power Dissipation:109W
Qg Gate Charge:24.5nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:11A
Turn-on Delay Time:46.5ns
Turn-off Delay Time:9.6ns
Rise Time:10ns
Fall Time:15.4ns
Gate Source Threshold:4V
Input Capacitance:845pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole

1000

35.9408

35940.8

2000

28.7567

57513.4

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