STP11NM60FD Mosfets_Inventory of electronic components_Electronic equipment_Power management

STP11NM60FD


：	STP11NM60FD
：	Mosfets
：	STMicroelectronics
：	N-Channel 600 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
No of Channels:	1
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	0.45Ω
Rated Power Dissipation:	160W
Qg Gate Charge:	28nC
Gate-Source Voltage-Max [Vgss]:	30V
Drain Current:	11A
Turn-on Delay Time:	20ns
Rise Time:	16ns
Fall Time:	15ns
Gate Source Threshold:	4V
Input Capacitance:	900pF
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Through Hole

PDF(1)

55.497

2774.85

150

47.4415

7116.225

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46.7221

11680.525

750

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33856.05

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55527.5

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