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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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STL4N80K5
STL4N80K5
:
STL4N80K5
:
Mosfets
:
STMicroelectronics
:
STL4N80K5 Serie
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
800V
Drain-Source On Resistance-Max:
2.5Ω
Rated Power Dissipation:
38|W
Qg Gate Charge:
10.5nC
Package Style:
POWER FLAT
Mounting Method:
Surface Mount
PDF(1)
3000
14.3784
43135.2
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