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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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STH310N10F7-6
STH310N10F7-6
:
STH310N10F7-6
:
Mosfets
:
STMicroelectronics
:
STH310N10F7 Ser
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
2.3mΩ
Rated Power Dissipation:
315|W
Qg Gate Charge:
180nC
Mounting Method:
Surface Mount
PDF(1)
1000
57.6553
57655.3
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