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STF42N60M2-EP

  • STF42N60M2-EP
  • STF42N60M2-EP
STF42N60M2-EP
Mosfets
STMicroelectronics
STF42N60M2: 650
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:87mΩ
Rated Power Dissipation:40W
Qg Gate Charge:55nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:34A
Turn-on Delay Time:16.5ns
Turn-off Delay Time:96.5ns
Rise Time:9.5ns
Fall Time:8ns
Gate Source Threshold:3V
Technology:MDmesh
Input Capacitance:2370pF
Package Style: TO-220FP (TO-220FPAB)
Mounting Method:Through Hole
PDF(1)

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82.6629

4133.145

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69.8753

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69.156

13831.2

500

66.9977

33498.85

750

66.1364

49602.3

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