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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 0.23Ω |
| Rated Power Dissipation: | 30W |
| Qg Gate Charge: | 29nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 16A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 68ns |
| Rise Time: | 9.5ns |
| Fall Time: | 25.5ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 16.4mm |
| Length: | 10.4mm |
| Input Capacitance: | 1060pF |
| Package Style: | TO-220FP (TO-220FPAB) |
| Mounting Method: | Through Hole |
50
31.0568
1552.84
150
26.8823
4032.345
500
25.8791
12939.55
1000
25.4433
25443.3
2000
24.8759
49751.8
