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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 800V |
| Drain-Source On Resistance-Max: | 3.5Ω |
| Rated Power Dissipation: | 80W |
| Qg Gate Charge: | 22.5nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 3A |
| Turn-on Delay Time: | 13ns |
| Turn-off Delay Time: | 35ns |
| Rise Time: | 12ns |
| Fall Time: | 32ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.75V |
| Input Capacitance: | 575pF |
| Package Style: | TO-251 (IPAK) |
| Mounting Method: | Through Hole |
3000
15.3816
46144.8
.jpg "DF20EG-10DP-1V(91)")
(SN).jpg "RA-H261TD-1190(LF)(SN)")
