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STB6NK60Z-1

  • STB6NK60Z-1
  • STB6NK60Z-1
STB6NK60Z-1
Mosfets
STMicroelectronics
N-Channel 600 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:1.2Ω
Rated Power Dissipation:110W
Qg Gate Charge:33nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:6A
Turn-on Delay Time:14ns
Turn-off Delay Time:47ns
Rise Time:14ns
Fall Time:19ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3.75V
Input Capacitance:905pF
Package Style: TO-262 (I2PAK)
Mounting Method:Through Hole
PDF(1)

50

10.9231

546.155

200

9.5602

1912.04

750

9.2006

6900.45

2000

8.9828

17965.6

5000

8.7649

43824.5

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