STB28N60M2 Mosfets_Inventory of electronic components_Electronic equipment_Power management

STB28N60M2


：	STB28N60M2
：	Mosfets
：	STMicroelectronics
：	N-Channel 600 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	150mΩ
Rated Power Dissipation:	170\|W
Qg Gate Charge:	36nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

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