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STB11NM80T4

  • STB11NM80T4
  • STB11NM80T4
STB11NM80T4
Mosfets
STMicroelectronics
N-Channel 800 V
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:800V
Drain-Source On Resistance-Max:0.4Ω
Rated Power Dissipation:150|W
Qg Gate Charge:43.6nC
Package Style: TO-263-3 (D2PAK)
Mounting Method:Surface Mount
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1000

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