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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 5.6mΩ |
| Rated Power Dissipation: | 125W |
| Qg Gate Charge: | 30nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 100A |
| Turn-on Delay Time: | 21.6ns |
| Turn-off Delay Time: | 28.6ns |
| Rise Time: | 55.5ns |
| Fall Time: | 15ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 4.6mm |
| Length: | 1.4mm |
| Input Capacitance: | 1980pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
1000
29.3242
29324.2
2000
23.437
46874
