TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 0.065Ω |
Rated Power Dissipation: | 3W |
Qg Gate Charge: | 13nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 8A |
Turn-on Delay Time: | 7.5ns |
Turn-off Delay Time: | 12ns |
Rise Time: | 13ns |
Fall Time: | 8.5ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.5V |
Technology: | Si |
Height - Max: | 1.02mm |
Length: | 3.04mm |
Input Capacitance: | 442pF |
3000
5.2437
15731.1
6000
5.0359
30215.4
9000
4.7422
42679.8
12000
4.5243
54291.6