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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SPW35N60C3FKSA1
SPW35N60C3FKSA1
:
SPW35N60C3FKSA1
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Tube
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
600V
Drain-Source On Resistance-Max:
0.1Ω
Rated Power Dissipation:
313|W
Qg Gate Charge:
150nC
Package Style:
TO-247-3
Mounting Method:
Through Hole
PDF(1)
30
193.2213
5796.639
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