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SISH116DN-T1-GE3

  • SISH116DN-T1-GE3
  • SISH116DN-T1-GE3
SISH116DN-T1-GE3
Mosfets
Vishay
Single N-Channe
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:40V
Drain-Source On Resistance-Max:7.8mΩ
Rated Power Dissipation:1.5W
Qg Gate Charge:15nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:10.5A
Turn-on Delay Time:10ns
Turn-off Delay Time:36ns
Rise Time:10ns
Fall Time:10ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:2.5V
Package Style: POWERPAK-1212-8
Mounting Method:Surface Mount
PDF(1)

3000

16.9622

50886.6

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