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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SIR882DP-T1-GE3
SIR882DP-T1-GE3
:
SIR882DP-T1-GE3
:
Mosfets
:
Vishay
:
SiR882DP Series
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
8.7mΩ
Rated Power Dissipation:
5.4|W
Qg Gate Charge:
38.5nC
Package Style:
POWERPAK-SO-8
Mounting Method:
Surface Mount
PDF(1)
3000
22.4238
67271.4
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