TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 600V |
Drain-Source On Resistance-Max: | 0.098Ω |
Rated Power Dissipation: | 278W |
Qg Gate Charge: | 155nC |
Gate-Source Voltage-Max [Vgss]: | 30V |
Drain Current: | 33A |
Turn-on Delay Time: | 28ns |
Turn-off Delay Time: | 161ns |
Rise Time: | 43ns |
Fall Time: | 48ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Height - Max: | 9.14mm |
Length: | 10.52mm |
Input Capacitance: | 3454pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
1
76.482
76.482
15
69.4397
1041.5955
50
66.562
3328.1
150
63.9782
9596.73
500
61.2423
30621.15