SIHH26N60E-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHH26N60E-T1-GE3


：	SIHH26N60E-T1-GE3
：	Mosfets
：	Vishay
：	N-Channel 600 V
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	135mΩ
Rated Power Dissipation:	202\|W
Qg Gate Charge:	77nC
Mounting Method:	Surface Mount

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