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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SIHG47N60E-E3
SIHG47N60E-E3
:
SIHG47N60E-E3
:
Mosfets
:
Vishay
:
E-Series N-Chan
:
-
:
Tube
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
600V
Drain-Source On Resistance-Max:
0.064Ω
Rated Power Dissipation:
357|W
Qg Gate Charge:
220nC
Package Style:
TO-247AC
Mounting Method:
Flange Mount
PDF(1)
500
90.8603
45430.15
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E-Series N-Channel 600 V 0.064 Ω 220 nC Flange Mount Power Mosfet - TO-247AC
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