SIHB33N60E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHB33N60E-GE3


：	SIHB33N60E-GE3
：	Mosfets
：	Vishay
：	MOSFET 600V 99M
：	-
：	Bulk
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	99mΩ
Rated Power Dissipation:	278\|W
Qg Gate Charge:	100nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

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