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SIHB30N60E-GE3

  • SIHB30N60E-GE3
  • SIHB30N60E-GE3
SIHB30N60E-GE3
Mosfets
Vishay
E-Series N-Chan
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:125mΩ
Rated Power Dissipation:250|W
Qg Gate Charge:85nC
Package Style: TO-263-3 (D2PAK)
Mounting Method:Surface Mount
PDF(1)

50

60.5229

3026.145

150

51.758

7763.7

250

50.8967

12724.175

750

49.1642

36873.15

1250

48.4447

60555.875

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