SIHB22N60E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHB22N60E-GE3


：	SIHB22N60E-GE3
：	Mosfets
：	Vishay
：	E-Series N-Chan
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	180mΩ
Rated Power Dissipation:	227\|W
Qg Gate Charge:	57nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

69.8753

3493.765

150

59.5197

8927.955

250

58.5166

14629.15

500

57.2196

28609.8

1000

55.9226

55922.6

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