SIA911ADJ-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIA911ADJ-T1-GE3


：	SIA911ADJ-T1-GE3
：	Mosfets
：	Vishay
：	20V, 4.5A, 0.11
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual P-Ch
Drain-to-Source Voltage [Vdss]:	20V
Drain-Source On Resistance-Max:	116mΩ
Rated Power Dissipation:	1.8\|W
Qg Gate Charge:	8.4nC
Package Style:	POWERPAK-SC-70-6L
Mounting Method:	Surface Mount

PDF(1)

3000

3.4552

10365.6

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2.8433

17059.8

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2.8189

25370.1

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2.8018

33621.6

15000

2.7845

41767.5

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SIA911ADJ-T1-GE3

20V, 4.5A, 0.116 OHM, DUAL, P-CHANNEL, PPAK SC-70-6

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