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SIA537EDJ-T1-GE3

  • SIA537EDJ-T1-GE3
  • SIA537EDJ-T1-GE3
SIA537EDJ-T1-GE3
Mosfets
Vishay
N-Ch/P-Ch 12 V/
-
Reel
-
TYPEDESCRIPTION
Fet Type:Dual N/P-Ch
No of Channels:2
Drain-to-Source Voltage [Vdss]:12V/20V
Drain-Source On Resistance-Max:28mΩ/54mΩ
Rated Power Dissipation:1.9W
Qg Gate Charge:10.5nC/16.3nC
Gate-Source Voltage-Max [Vgss]:8V
Drain Current:4.5A
Turn-on Delay Time:10ns/15ns
Turn-off Delay Time:25ns/30ns
Rise Time:12ns/15ns
Fall Time:12ns/10ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:1V
Input Capacitance:455pF/770pF
Package Style: POWERPAK-SC-70-6L
Mounting Method:Surface Mount
PDF(1)

3000

6.3988

19196.4

6000

6.0391

36234.6

9000

5.7553

51797.7

12000

5.4615

65538

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