SIA445EDJ-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIA445EDJ-T1-GE3


：	SIA445EDJ-T1-GE3
：	Mosfets
：	Vishay
：	Single P-Channe
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	20V
Drain-Source On Resistance-Max:	0.0165Ω
Rated Power Dissipation:	19\|W
Qg Gate Charge:	23nC
Package Style:	POWERPAK-SC-70-6L
Mounting Method:	Surface Mount

PDF(1)

3000

6.4647

19394.1

6000

6.1151

36690.6

9000

5.8213

52391.7

12000

5.5375

66450

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