SI9926CDY-T1-E3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI9926CDY-T1-E3


：	SI9926CDY-T1-E3
：	Mosfets
：	Vishay
：	Dual N-Channel
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N-Ch
Drain-to-Source Voltage [Vdss]:	20V
Drain-Source On Resistance-Max:	0.018Ω
Rated Power Dissipation:	3.1\|W
Qg Gate Charge:	33nC
Package Style:	SOIC-8
Mounting Method:	Surface Mount

PDF(1)

2500

7.2601

18150.25

5000

6.9005

34502.5

7500

6.6166

49624.5

10000

6.2569

62569

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SI9926CDY-T1-E3

Dual N-Channel 20 V 0.018 Ohms Surface Mount Power Mosfet - SOIC-8

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