TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | -60V |
Drain-Source On Resistance-Max: | 0.15Ω |
Rated Power Dissipation: | 2.4W |
Qg Gate Charge: | 12nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | -3.2A |
Turn-on Delay Time: | 45ns |
Turn-off Delay Time: | 60ns |
Rise Time: | 105ns |
Fall Time: | 45ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | -3V |
Technology: | Si |
Height - Max: | 1.75mm |
Length: | 5mm |
Input Capacitance: | 600pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
12.9395
32348.75