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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SI7858ADP-T1-E3
SI7858ADP-T1-E3
:
SI7858ADP-T1-E3
:
Mosfets
:
Vishay
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
12V
Drain-Source On Resistance-Max:
0.0026Ω
Rated Power Dissipation:
1.9|W
Qg Gate Charge:
80nC
Package Style:
POWERPAK-SO-8
Mounting Method:
Surface Mount
3000
44.7157
134147.1
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15815509278
295144934@qq.com
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