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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SI7611DN-T1-GE3
SI7611DN-T1-GE3
:
SI7611DN-T1-GE3
:
Mosfets
:
Vishay
:
P-Channel 40 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
P-Ch
Drain-to-Source Voltage [Vdss]:
40V
Drain-Source On Resistance-Max:
0.025Ω
Rated Power Dissipation:
39|W
Qg Gate Charge:
62nC
Package Style:
POWERPAK-1212-8
Mounting Method:
Surface Mount
PDF(1)
3000
12.362
37086
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