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| TYPE | DESCRIPTION |
| Fet Type: | Dual N/P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 0.0195Ω/0.043Ω |
| Rated Power Dissipation: | 1.6W |
| Qg Gate Charge: | 27nC/48nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 6.1A/8A |
| Turn-on Delay Time: | 12ns/15ns |
| Turn-off Delay Time: | 22ns/30ns |
| Rise Time: | 90ns/100ns |
| Fall Time: | 25ns/20ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.4V |
| Technology: | Si |
| Height - Max: | 1.12mm |
| Length: | 6.25mm |
| Input Capacitance: | 915pF/1310pF |
3000
17.5398
52619.4
