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SI5922DU-T1-GE3

  • SI5922DU-T1-GE3
  • SI5922DU-T1-GE3
： SI5922DU-T1-GE3
： Mosfets
： Vishay
： Dual N-Channel
： -
： Reel
： -
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:2
Drain-to-Source Voltage [Vdss]:30V
Drain-Source On Resistance-Max:19.2mΩ
Rated Power Dissipation:2.3W
Qg Gate Charge:10nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:6A
Turn-on Delay Time:6ns
Turn-off Delay Time:15ns
Rise Time:25ns
Fall Time:10ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:2.2V
Input Capacitance:765pF
Mounting Method:Surface Mount
PDF(1)

3000

3.4552

10365.6

6000

2.7845

16707

9000

2.7602

24841.8

12000

2.743

32916

15000

2.7358

41037

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