SI5908DC-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI5908DC-T1-GE3


：	SI5908DC-T1-GE3
：	Mosfets
：	Vishay
：	DUAL N-CH 1206-
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N-Ch
Drain-to-Source Voltage [Vdss]:	20V
Drain-Source On Resistance-Max:	40mΩ
Rated Power Dissipation:	1.1\|W
Qg Gate Charge:	5nC
Mounting Method:	Surface Mount

PDF(1)

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