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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SI4946BEY-T1-GE3
SI4946BEY-T1-GE3
:
SI4946BEY-T1-GE3
:
Mosfets
:
Vishay
:
DUAL N-CH MOSFE
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
Dual N-Ch
Drain-to-Source Voltage [Vdss]:
60V
Drain-Source On Resistance-Max:
41mΩ
Rated Power Dissipation:
3.7|W
Qg Gate Charge:
25nC
Package Style:
SOIC-8
Mounting Method:
Surface Mount
PDF(1)
2500
23.7208
59302
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15815509278
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