TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 12V |
Drain-Source On Resistance-Max: | 18mΩ |
Rated Power Dissipation: | 1.1|W |
Qg Gate Charge: | 34.5nC |
Gate-Source Voltage-Max [Vgss]: | 8V |
Drain Current: | 6.7A |
Turn-on Delay Time: | 25ns |
Turn-off Delay Time: | 230ns |
Rise Time: | 46ns |
Fall Time: | 155ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1V |
Height - Max: | 1.55mm |
Length: | 5mm |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
10.4216
26054
5000
8.4152
42076
7500
8.3392
62544