TYPE | DESCRIPTION |
Fet Type: | P-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 27mΩ |
Rated Power Dissipation: | 2|W |
Qg Gate Charge: | 41.5nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 6.4A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 50ns |
Rise Time: | 9ns |
Fall Time: | 13ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2.5V |
Height - Max: | 1.55mm |
Length: | 5mm |
Input Capacitance: | 2000pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
10.7153
26788.25
5000
8.623
43115
7500
8.5571
64178.25