SI4900DY-T1-E3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI4900DY-T1-E3


：	SI4900DY-T1-E3
：	Mosfets
：	Vishay
：	Dual N-Channel
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N-Ch
Drain-to-Source Voltage [Vdss]:	60V
Drain-Source On Resistance-Max:	0.058Ω
Rated Power Dissipation:	3.1\|W
Qg Gate Charge:	20nC
Package Style:	SOIC-8
Mounting Method:	Surface Mount

PDF(1)

2500

10.499

26247.5

5000

8.4822

42411

7500

8.4163

63122.25

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