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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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SI4896DY-T1-GE3
SI4896DY-T1-GE3
:
SI4896DY-T1-GE3
:
Mosfets
:
Vishay
:
Si4896DY Series
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
80V
Drain-Source On Resistance-Max:
16.5mΩ
Rated Power Dissipation:
1.56|W
Qg Gate Charge:
34nC
Package Style:
SOIC-8
Mounting Method:
Surface Mount
PDF(1)
2500
25.8826
64706.5
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Si4896DY Series 80 V 6.7 A 16.5 mOhm Surface Mount N-Channel MOSFET - SOIC-8
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