TYPE | DESCRIPTION |
Fet Type: | N-Ch |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 4.2mΩ |
Rated Power Dissipation: | 6.25|W |
Qg Gate Charge: | 100nC |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
13.3011
33252.75
5000
11.2844
56422