SI4599DY-T1-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI4599DY-T1-GE3


：	SI4599DY-T1-GE3
：	Mosfets
：	Vishay
：	N- AND P- CHANN
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N/P-Ch
Drain-to-Source Voltage [Vdss]:	40V/-40V
Drain-Source On Resistance-Max:	0.0355Ω/0.045Ω
Rated Power Dissipation:	3.1\|W
Qg Gate Charge:	11.7nC/25nC
Package Style:	SOIC-8
Mounting Method:	Surface Mount

PDF(1)

2500

9.4955

23738.75

Analog Devices Inc./Maxim Integrated

DS21348TN+

IC TELECOM INTERFACE 44TQFP

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American Zettler

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SI4599DY-T1-GE3

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Nexperia

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AiSHi

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Yageo

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TDK

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Winbond

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TE Connectivity / AMP

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Maxim Integrated

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