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SI4430BDY-T1-GE3

  • SI4430BDY-T1-GE3
  • SI4430BDY-T1-GE3
  • SI4430BDY-T1-GE3
  • SI4430BDY-T1-GE3
SI4430BDY-T1-GE3
Mosfets
Vishay
Single N-Channe
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:30V
Drain-Source On Resistance-Max:0.006Ω
Rated Power Dissipation:1.6W
Qg Gate Charge:36nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:14A
Turn-on Delay Time:30ns
Turn-off Delay Time:90ns
Rise Time:22ns
Fall Time:30ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3V
Technology:Si
Height - Max:1.75mm
Length:5mm
Package Style: SOIC-8
Mounting Method:Surface Mount
PDF(1)

2500

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11.862

59310

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