TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 0.006Ω |
Rated Power Dissipation: | 1.6W |
Qg Gate Charge: | 36nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 14A |
Turn-on Delay Time: | 30ns |
Turn-off Delay Time: | 90ns |
Rise Time: | 22ns |
Fall Time: | 30ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | Si |
Height - Max: | 1.75mm |
Length: | 5mm |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
14.816
37040
5000
11.862
59310