TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 0.009Ω |
Rated Power Dissipation: | 2.5W |
Qg Gate Charge: | 32nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 13.6A |
Turn-on Delay Time: | 45ns |
Turn-off Delay Time: | 60ns |
Rise Time: | 21ns |
Fall Time: | 17ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | Si |
Height - Max: | 1.75mm |
Length: | 5mm |
Input Capacitance: | 3540pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
2500
13.5189
33797.25