SI3900DV-T1-E3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SI3900DV-T1-E3


：	SI3900DV-T1-E3
：	Mosfets
：	Vishay
：	Dual N-Channel
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N-Ch
Drain-to-Source Voltage [Vdss]:	20V
Drain-Source On Resistance-Max:	0.125Ω
Rated Power Dissipation:	0.83\|W
Qg Gate Charge:	4nC
Package Style:	SC-74 (TSOP-6)
Mounting Method:	Surface Mount

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